2N4261JV(2005) 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N4261JV Datasheet PDF : 2 Pages
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2N4261
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current
Symbol
Test Conditions
V(BR)CEO IC = 10 mA
ICBO
ICEX1
ICEX2
ICEX3
IEBX
VCB = 15 Volts
VCE = 10Volts, VBE = 0.4Volts
VCE = 10 Volts, VBE = 2 Volts
VCE = 10 Volts, VBE = 2 Volts,
TA = 150°C
VBE = 2 Volts, VCE = 10 Volts
IEBO VEB = 4.5 Volts
characteristics specified at TA = 25°C
Min
Typ
Max Units
15
Volts
10
µA
50
nA
5
nA
5
µA
5
nA
10
µA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Collector Base time constant
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
hFE1
hFE2
hFE3
hFE4
VBE1
VBE2
VCEsat1
VCEsat2
Test Conditions
IC = 1 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
IC = 30 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
TA = -55°C
VCE = 1 Volts, IC = 1 mA
VCE = 1 Volts, IC = 10 mA
IC = 1 mA, IB = 0.1 mA
IC = 10 mA, IB = 1 mA
Min
Typ
Max Units
25
30
150
20
15
0.8
Volts
1.0
0.15
0.35
Volts
Symbol
Test Conditions
Min
Typ
Max Units
f = 100 MHz
|hFE1| VCE = 4 Volts, IC = 5 mA
15
|hFE2| VCE = 10 Volts, IC = 10 mA
20
COBO
VCB = 4 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
rb’CC1
rb’CC2
VCE = 4 Volts, f = 31.8 MHz
IC = 5 mA
IC = 10 mA
2.5
pF
2.5
pF
60
50
ps
tON
VCC = 17 Volts, IC = 10 mA
tOFF
VCC = 17 Volts, IC = 10 mA
2.5
ns
3.5
ns
Copyright© 2005
Rev. E
SEMICOA
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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