2N4261JV(2005) 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N4261JV Datasheet PDF : 2 Pages
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Description
Semicoa offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N4261J)
• JANTX level (2N4261JX)
• JANTXV level (2N4261JV)
• JANS level (2N4261JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PT
RθJA
TJ
TSTG
2N4261
Silicon PNP Transistor
Data Sheet
Applications
• General purpose switching transistor
• Low power
• PNP silicon transistor
Features
• Hermetically sealed TO-72 metal can
• Also available in chip configuration
• Chip geometry 0014
• Reference document:
MIL-PRF-19500/511
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
15
Volts
15
Volts
4.5
Volts
30
mA
200
mW
1.14
mW/°C
0.86
°C/mW
-65 to +200
°C
Copyright© 2005
Rev. E
SEMICOA
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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