2N3960UBJ(2002) 데이터 시트보기 (PDF) - Semicoa Semiconductor

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2N3960UBJ
(Rev.:2002)

Silicon NPN Transistor

Semicoa Semiconductor 

Description

Semicoa Semiconductors offers:

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N3960UBJ)

• JANTX level (2N3960UBJX)

• JANTXV level (2N3960UBJV)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV

• Radiation testing (total dose) upon request

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Power Dissipation, TA = 25°C

Derate linearly above 25°C

Operating Junction Temperature

Storage Temperature

Symbol

VCEO

VCBO

VEBO

PT

TJ

TSTG

2N3960UB

Silicon NPN Transistor

Data Sheet

Applications

• General purpose

• Low power switching transistor

• NPN silicon transistor

Features

• Hermetically sealed Cersot ceramic

• Also available in chip configuration

• Chip geometry 0003

• Reference document:

MIL-PRF-19500/399

Benefits

• Qualification Levels: JAN, JANTX, and

JANTXV

• Radiation testing available

TC = 25°C unless otherwise specified

Rating

Unit

12

Volts

20

Volts

4.5

Volts

400

2.3

-65 to +200

mW

mW/°C

°C

-65 to +200

°C

Copyright 2002

Rev. D

Semicoa Semiconductors, Inc.

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

www.SEMICOA.com

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