2N2857(V2) 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N2857 Datasheet PDF : 2 Pages
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Data Sheet No. 2N2857
Electrical Characteristics
OFF Characteristics
TC = 25oC unless otherwise specified
Symbol Min
Collector-Base Breakdown Voltage
IC = 1 µA
Collector-Emitter Breakdown Voltage
IC = 3 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VCB = 15 V
V(BR)CBO
30
V(BR)CEO
15
V(BR)EBO
3.0
ICES
---
Collector-Base Cutoff Current
VCB = 15 V
ICBO
---
Max
---
---
---
100
10
Unit
V
V
V
nA
nA
ON Characteristics
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 1 mA
Symbol
VCE(sat)
VBE(sat)
Min
---
---
Max
0.4
1.0
Unit
V dc
V dc
Small Signal Characteristics
Forward Current Transfer Ratio
IC = 3 mA, VCE = 1 V
IC = 2 mA, VCE = 6 V, case lead floating
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
VCE = 6 V, IC = 5 mA, f = 100 MHz
Small Signal Power Gain
Collector-Base Feedback Capacitance
VCB = 10 V, IE = 2 mA, 100 kHz < f < 1 MHz
Collector-Base Time Constant
VCE = 6 V, IE = 2 mA, f = 31.9 MHz
Noise Figure
VCE = 6 V, IC = 1.5 mA,rg = 50 ohms, 450 MHz
Symbol
hFE
hFE
|hFE|
GPE
CCB
rb'CC
NF
Min
30
50
10
12.5
---
4.0
---
Max
150
220
21
21
1.0
15
4.5
Unit
---
---
---
dB
pF
ps
dB
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