TC58NVG1S3EBAI4 데이터 시트보기 (PDF) - Toshiba
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TC58NVG1S3EBAI4 Datasheet PDF : 3 Pages
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NAND Flash Memory(SLC Middle Capacity)
Product list of NAND Flash Memory SLC Middle Capacity
Capacity
bit
Tech.
Node
nm
Page
Size
bit
Block
Size
bit
Power
Supply
V
Operating
Temperature I/O
°C
Package
Part Number
Access Time
Program
/Erase Time
typ.
Serial
cycle
1st Program Erase
access Time Time
min
typ
μs
ms
ns
µs
512M 43
0
to
70
2.7
to
3.6
2048 128K
+64 +4K
×8 ×8
-40
to
85
1.70 to
1.95
TSOP I 48-P-1220- TC58NVM9S3ETA00 25
25
300
2.5
0.50
TC58NVM9S3ETAI0 25
25
300
2.5
P -TFBGA63-0911 -
TC58NVM9S3EBAI4 25
25
300
2.5
0.80CZ
x8
P -VFBGA67-0608 -
TC58NVM9S3EBAI6 25
25
300
2.5
0.80-001
P -TFBGA63-0911 -
TC58NYM9S3EBAI4 25
25
300
2.5
0.80CZ
P -VFBGA67-0608 -
TC58NYM9S3EBAI6 25
25
300
2.5
0.80-001
0
to
70
2.7
to
3.6
2048 128K
43
+64 +4K
×8 ×8
-40
to
85
1.70 to
1.95
1G
TSOP I 48-P-1220- TC58DVG02D5TA00 25
25
300
2.5
0.50
TC58DVG02D5TAI0 25
25
300
2.5
P -TFBGA63-0911 -
TC58DVG02D5BAI4 25
25
300
2.5
0.80CZ
x8
P -VFBGA67-0608 -
TC58DVG02D5BAI6 25
25
300
2.5
0.80-001
P -TFBGA63-0911 -
TC58DYG02D5BAI4 25
25
300
2.5
0.80CZ
P -VFBGA67-0608 -
TC58DYG02D5BAI6 25
25
300
2.5
0.80-001
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