TC1072 데이터 시트보기 (PDF) - Microchip Technology

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TC1072

50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass

Microchip Technology 

TC1072/TC1073

Note: Unless otherwise specified, all parts are measured at temperature = +25°C.

Measure Rise Time of 3.3V LDO with Bypass Capacitor

Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA

VIN = 4.3V, Temp = 25°C, Rise Time = 448μS

Measure Rise Time of 3.3V LDO without Bypass Capacitor

Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA

VIN = 4.3V, Temp = 25°C, Rise Time = 184μS

VSHDN

VSHDN

VOUT

VOUT

Measure Fall Time of 3.3V LDO with Bypass Capacitor

Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA

VIN = 4.3V, Temp = 25°C, Fall Time = 100μS

VSHDN

VOUT

Measure Fall Time of 3.3V LDO without Bypass Capacitor

Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA

VIN = 4.3V, Temp = 25°C, Fall Time = 52μS

VSHDN

VOUT

© 2007 Microchip Technology Inc.

DS21354D-page 7

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