TA8493F(2002) 데이터 시트보기 (PDF) - Toshiba

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TA8493F
(Rev.:2002)

Toshiba Bipolar Linear Integrated Circuit Multi-Chip

Toshiba 

TA8493F/AF/BF

Characteristics

Output Circuit

Output

Resistance

(upper side)

Saturation

Voltage

(lower side)

Cut-off Current

(upper side)

Cut-off Current

(lower side)

Mode Select

Circuit

Input Voltage (H)

Input Voltage (L)

Input Current

Hysteresis

Voltage

FG Amp.

Output Voltage

(H)

Output Voltage

(L)

Short Brake

Circuit

Input Voltage (H)

Input Voltage (L)

Input Current

Triangular

Oscillation

Oscillation Circuit Frequency

Thermal Shut-down Operating

Temperature

Note2: this is not tested.

Symbol

Test

Circuit

Test Condition

RON (U)

VSAT (L)

IO = 0.6 A

4

IO = 0.6 A

Min Typ. Max Unit

¾

0.5 1.0

W

¾

0.4 0.8

V

IL (U)

IL (L)

VMS (H)

VMS (L)

IINMS

VHYS

VOFG (H)

VOFG (L)

VBRK (H)

VBRK (L)

IINBRK

fOSC

TSD

VL = 16 V

5

VL = 16 V

¾

¾

10

mA

¾

¾

10

CCW mode

VC > Vref, BRK: L

6 Reversing brake mode

VC > Vref, BRK: L

3.0

¾

VCC

V

¾

¾

0.5

VMS = GND, (source current)

¾

¾

1

mA

8

¾

5

20

45 mVp-p

Source current: 10 mA

7

Sink current: 10 mA

VCC

- 0.5

¾

¾

V

¾

¾

0.5

¾

3.0

6

¾

¾

VBRK = GND, (source current) ¾

¾ C = 560 pF

(Note2) ¾

¾

VCC

V

¾

0.5

¾

1

mA

39

¾ kHz

Junction temperature

¾ (according to design

¾ 175 ¾

°C

specification)

(Note2)

5

2002-01-31

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