TA84005F 데이터 시트보기 (PDF) - Toshiba
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TA84005F Datasheet PDF : 21 Pages
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TA84005F/FG
Electrical Characteristics (Ta = 25°C, VCC = 5 V, VM = 20 V)
Characteristic
Input voltage
Input current
Power supply current
Lower output saturation voltage
Upper output ON-resistance
Lower diode forward voltage
Upper diode forward voltage
Mid-point voltage
Pin voltage detection level
Pin voltage detection output voltage
Overcurrent detection level
Overcurrent detection output voltage
Reference voltage
TSD temperature
TSD hysteresis width
Output leakage current
Symbol
Test
Circuit
Test Conditions
Min
IN_UP, IN_VP, IV_WP
VIN (H)
1
2.5
IN_UN, IN_VN, IN_WN
VIN (L)
IIN1 (H)
1
⎯
VIN = 5 V,
2
IN_UP, IN_VP, IN_WP
GND
⎯
VIN = 5 V,
IIN2 (H)
2
300
IN_UN, IN_VN, IN_WN
VIN = GND,
IIN1 (L)
2
⎯
IN_UN, IN_VN, IN_WN
VIN = GND,
IIN2 (L)
2
300
IN_UP, IN_VP, IN_WP
ICC1
3
Upper phase 1 ON,
lower phase 1 ON, output open
⎯
Upper phase 2 ON,
ICC2
3 synchronous regeneration
⎯
mode, output open
ICC3
IM1
3 All phases OFF, output open
⎯
3
Upper phase 1 ON,
lower phase 1 ON, output open
⎯
Upper phase 2 ON,
IM2
3 synchronous regeneration
⎯
mode, output open
IM3
3 All phases OFF, output open
⎯
VSAT
4 IO = 0.5 A
⎯
Ron
5 IO = ±0.5 A, bi-directional
⎯
VF (L)
6 IF = 0.5 A
⎯
VF (H)
7 IF = 0.5 A
⎯
VM = 20 V
VN
8
9.88
VRF = 0 V
VM = 20 V
VCMP
9
9.88
VRF = 0 V
VOL (CMP)
ROH (CMP)
9 IOL = 1 mA
9
⎯
GND
7
VRF
10
⎯
0.45
VOH (ISD) 10 IOH = 0.1 mA
4.5
ROL (ISD) 10
⎯
14
VZ
TSD
∆T
11 IZ = 0.5 mA, Tj = 25°C
⎯ Tj
⎯
⎯
20.9
⎯
⎯
IL (H)
12 Pch-MOS
⎯
IL (L)
13
⎯
⎯
Typ. Max Unit
⎯
5.0
V
⎯
0.8
⎯
20
450 600
µA
⎯
1
450 600
8.0 13.0
7.0 12.0
6.0
11
mA
2.0 3.5
2.0 3.5
1.8 3.2
1.0 1.5
V
0.65 1.0
Ω
1.2 1.6
V
0.9 1.4
V
10.4 10.92 V
10.4 10.92 V
⎯
0.5
V
10
13
kΩ
0.5 0.55
V
⎯
5.0
V
20
26
kΩ
22.0 23.1
V
180 ⎯
°C
30
⎯
°C
0
100
µA
0
50
6
2004-08-10
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