STW26NM60N(2016) 데이터 시트보기 (PDF) - STMicroelectronics

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STW26NM60N
(Rev.:2016)

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-247 package

STMicroelectronics 

STW26NM60N

1

Electrical ratings

Symbol

Table 2: Absolute maximum ratings

Parameter

VDS

VGS

ID

ID

IDM (1)

PTOT

dv/dt (2)

Tstg

Tj

Drain-source voltage

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

Storage temperature range

Operating junction temperature range

Notes:

(1)Pulse width limited by safe operating area.

(2)ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDS(peak) ≤ V(BR)DSS, VDD ≤ 80% V(BR)DSS

Symbol

Rthj-case

Rthj-amb

Table 3: Thermal data

Parameter

Thermal resistance junction-case

Thermal resistance junction-ambient

Symbol

IAS

EAS

Table 4: Avalanche characteristics

Parameter

Single pulse avalanche current (pulse width limited by

Tjmax)

Single pulse avalanche energy (starting TJ=25 °C, ID=IAS,

VDD=50 V)

Electrical ratings

Value

600

±30

20

12.6

80

140

15

-55 to 150

Unit

V

V

A

A

A

W

V/ns

°C

Value

0.89

50

Unit

°C/W

°C/W

Value

Unit

6

A

610

mJ

DocID025246 Rev 2

3/12

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