STTH6004W 데이터 시트보기 (PDF) - STMicroelectronics
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STTH6004W Datasheet PDF : 6 Pages
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STTH6004W
Table 4: Thermal Resistance
Symbol
Rth(j-c) Junction to case
Parameter
Value (max).
0.70
Unit
°C/W
Table 5: Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ
IR * Reverse leakage current Tj = 25 °C VR = VRRM
Tj = 150 °C
100
VF ** Forward voltage drop Tj = 25 °C IF = 60 A
Tj = 150 °C
0.83
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.0033 IF2(RMS)
Table 6: Dynamic characteristics
Max.
50
1000
1.2
1.0
Unit
µA
V
Symbol Parameter
Test conditions
Min Typ Max Unit
trr Reverse recovery Tj = 25 °C IF = 1 A dIF/dt = 50 A/µs VR =30 V
time
IF = 1 A dIF/dt = 200 A/µs VR =30 V
66 90 ns
36 50
IRM Reverse recovery Tj = 125 °C IF = 60 A VR = 200 V
current
dIF/dt = 100 A/µs
15 A
Sfactor Softness factor Tj = 125 °C IF = 60 A VR = 200 V
0.4
dIF/dt = 100 A/µs
tfr Forward recovery Tj = 25 °C IF = 60 A dIF/dt = 200 A/µs
time
VFR = 1.1 x VFmax
600 ns
VFP Forward recovery Tj = 25 °C IF = 60 A dIF/dt = 200 A/µs
voltage
VFR = 1.1 x VFmax
3.2
V
Figure 1: Conduction losses versus average
forward current
P (W)
80
d=0.5
d=1
70
d=0.2
60
d=0.1
50
d=0.05
40
30
20
T
10
IF(AV)(A)
0
0
10
20
30
40
50
60
70
80
Figure 2: Forward voltage drop versus forward
current
I FM(A)
200
180
160
TJ=150°C
(Maximum values)
140
120
TJ=150°C
100
(Typical values)
80
60
40
20
V FM (V)
0
TJ=25°C
(Maximum values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2/6
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