STTH3002C 데이터 시트보기 (PDF) - STMicroelectronics
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STTH3002C Datasheet PDF : 11 Pages
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Characteristics
STTH3002C
Figure 3.
IFM(A)
100
90
80
70
60
50
40
30
20
10
0
0.0 0.2
Forward voltage drop versus
forward current (maximum values,
per diode)
Tj=150°C
Tj=25°C
VFM(V)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
Single pulse
0.1
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Figure 5.
C(pF)
1000
100
10
0
Junction capacitance versus
reverse applied voltage (typical
values, per diode)
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
50
100
150
200
Figure 6. Reverse recovery charges versus
dIF/dt (typical values, per diode)
Qrr(nC)
250
225
IF=15A
VR=160V
200
175
150
125
100
75
50
25
0
10
Tj=125°C
dIF/dt(A/µs)
100
Tj=25°C
1000
Figure 7.
trr(ns)
70
IF=15A
60
VR=160V
50
40
30
20
10
0
10
Reverse recovery time versus
dIF/dt (typical values, per diode)
Figure 8.
Tj=125°C
dIF/dt(A/µs)
100
Tj=25°C
1000
IRM(A)
14
13
IF=15A
VR=160V
12
11
10
9
8
7
6
5
4
3
2
1
0
10
Peak reverse recovery current
versus dIF/dt (typical values, per
diode)
Tj=125°C
dIF/dt(A/µs)
100
Tj=25°C
1000
4/11
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