STTH3002CT(2004) 데이터 시트보기 (PDF) - STMicroelectronics
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STTH3002CT Datasheet PDF : 7 Pages
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STTH3002C
THERMAL PARAMETERS
Symbol
Rth (j-c) Junction to case
Rth (j-c) Coupling
Parameter
Per diode
Per device
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Maximum
1.5
1.0
0.5
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
IR* Reverse leakage
current
Tj = 25°C
Tj = 125°C
VR = VRRM
VF** Forward voltage drop Tj = 25°C
IF = 15 A
Tj = 25°C
IF = 30 A
Tj = 150°C
IF = 15 A
Tj = 150°C
IF = 30 A
Pulse test: * tp = 5ms, δ < 2%
** tp = 380µs, δ < 2%
Min. Typ. Max. Unit
20
µA
10 125
1.05 V
1.18
0.75 0.84
0.99
To evaluate the maximum conduction losses use the following equation :
P = 0.69 x IF(AV) + 0.01 IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter
Tests conditions
Min. Typ. Max. Unit
trr
Reverse
Tj = 25°C IF = 1 A VR = 30V
recovery time
dIF/dt = 200 A/µs
17 22 ns
IRM
Reverse
Tj = 125°C IF = 15 A VR = 160V
recovery current
dIF/dt = 200 A/µs
6.0 7.8 A
tfr
Forward
Tj = 25°C IF = 15 A dIF/dt = 200 A/µs
recovery time
VFR = 1.1 x VFmax
110 ns
VFP
Forward
Tj = 25°C IF = 15 A dIF/dt = 200 A/µs
2.5
V
recovery voltage
2/7
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