STTH16003TV1 데이터 시트보기 (PDF) - STMicroelectronics

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STTH16003TV1

High frequency secondary rectifier

STMicroelectronics 

STTH16003

Characteristics

Table 5.

Symbol

Recovery characteristics

Parameter

Test conditions

Min. Typ Max. Unit

trr Reverse recovery time

tfr

VFP

IRM

Sfactor

Forward recovery time

Forward recovery voltage

Reverse recovery current

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A

IR = 1 A

IF = 1 A, dIF/dt = 50 A/µs,

VR = 30 V

Tj = 25 °C

IF = 80 A dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

Tj = 125 °C

IF = 60 A, dIF/dt = 200 A/µs,

Vcc = 200 V

60 ns

80 ns

1000 ns

5

V

16 A

0.3

-

Figure 1. Conduction losses versus

average current (per diode)

Figure 2.

Forward voltage drop versus

forward current (maximum values,

per diode)

P1(W)

100

90

80

70

δ = 0.05 δ = 0.1

δ = 0.2

δ = 0.5

δ=1

IFM(A)

200

100

Tj=125°C

(Typical values)

Tj=25°C

60

50

Tj=125°C

40

10

30

T

20

10

IF(av) (A)

δ=tp/T

tp

0

0 10 20 30 40 50 60 70 80 90 100

VFM(V)

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Figure 3.

Relative variation of thermal

Figure 4.

impedance junction to case versus

pulse duration

Peak reverse recovery current

versus dIF/dt (90% confidence, per

diode)

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6 δ = 0.5

0.4 δ = 0.2

δ = 0.1

0.2

Single pulse

0.0

1E-3

1E-2

tp(s)

1E-1

IRM(A)

30

VR=200V

Tj=125°C

25

20

IF=IF(av)

IF=0.5xIF(av)

IF=2xIF(av)

15

10

T

δ=tp/T

1E+0

tp

5E+0

5

dIF/dt(A/µs)

0

0 50 100 150 200 250 300 350 400 450 500

3/7

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