STTH12003TV1 데이터 시트보기 (PDF) - STMicroelectronics
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STTH12003TV1 Datasheet PDF : 5 Pages
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Fig. 1: Conduction losses versus average current
(per diode).
P1(W)
90
80
δ = 0.1 δ = 0.2
δ = 0.5
δ = 0.05
70
60
δ=1
50
40
30
T
20
10
IF(av) (A)
δ=tp/T
tp
0
0 10 20 30 40 50 60 70 80
STTH12003TV
Fig. 2: Forward voltage drop versus forward
current (per diode).
IFM(A)
600
Tj=125°C
Typical values
100
Tj=25°C
Maximum values
Tj=125°C
Maximum values
10
VFM(V)
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence, per diode).
IRM(A)
30
VR=200V
25 Tj=125°C
20
IF=2*IF(a v)
IF=IF(av)
15
IF=0.5*IF(a v)
10
5
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
trr(ns)
200
180
160
140
120
100
IF=2*IF(av)
IF=IF(av)
VR=200V
Tj=125 °C
80
60
40
IF=0.5*IF(a v)
20
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values, per diode).
S factor
0.6
0.5
VR=200V
Tj=125 °C
0.4
0.3
0.2
0.1
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
3/5
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