STTH106RL 데이터 시트보기 (PDF) - STMicroelectronics
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STTH106RL Datasheet PDF : 5 Pages
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STTH106
Fig. 7: Softness factor versus dIF/dt (typical
values).
Fig. 8: Relative variation of dynamic
parameters versus junction temperature.
S factor
6
IF=IF(av)
VR=400V
5
Tj=125°C
4
3
2
1
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
S factor
IRM
Qrr
Tj(°C)
IF=IF(av)
VR=400V
Reference: Tj=125°C
50
75
100
125
Fig. 9: Transient peak forward voltage versus
dIF/dt (90% confidence).
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
VFp(V)
25
IF=IF(av)
Tj=125°C
20
15
10
5
dIF/dt(A/µs)
0
0
20 40 60 80 100 120 140 160 180 200
trr(ns)
200
180
160
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
140
120
100
80
60
40
20
0
0
dIF/dt(A/µs)
20 40 60 80 100 120 140 160 180 200
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
100
F=1MHz
Vosc =30mV
Tj=25°C
10
1
1
4/5
VR(V)
10
100
1000
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