PS16170CB 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

일치하는 목록

PS16170CB

High voltage power Schottky rectifier

STMicroelectronics 

Characteristics

1

Characteristics

STPS16170C

Table 1.

Symbol

Absolute ratings (limiting values per diode, Tamb = 25° C unless otherwise specified)

Parameter

Value

Unit

VRRM

IF(RMS)

IF(AV)

Repetitive peak reverse voltage

RMS forward current

Average forward current, δ = 0.5

Tc = 150° C

Per diode

Total package

IFSM

PARM

Tstg

Tj

dV/dt

Surge non repetitive forward current

tp = 10 ms Sinusoidal

Releative peak avalanche power

Tj = 25° C

tp = 1µs

Storage temperature range

Maximum operating junction temperature(1)

Critical rate of rise of reverse voltage

1. d----P-----t--o----t < ------------1------------- thermal runaway condition for a diode on its own heatsink

dTj Rth(j – a)

Table 2. Thermal parameters

170

20

8

16

75

4700

-65 to + 175

175

10 000

V

A

A

A

W

°C

°C

V/µs

Symbol

Parameter

Value

Unit

Rth(j-c)

Rth(c)

Junction to case

Coupling

Per diode

Total

3

1.8

°C/W

0.6

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ Max. Unit

IR(1) Reverse leakage current

VF(2) Forward voltage drop

Tj = 25° C

Tj = 125° C

Tj = 25° C

Tj = 125° C

Tj = 25° C

Tj = 125° C

VR = VRRM

IF = 8 A

IF = 16 A

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 0.64 x IF(AV) + 0.014 x IF2(RMS)

15 µA

15 mA

0.92

0.70 0.75

V

1

0.8 0.86

2/10

Share Link: