W14NK60Z 데이터 시트보기 (PDF) - STMicroelectronics

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W14NK60Z

N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical ratings

STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAS

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting Tj=25°C, Id=Iar, Vdd=50V)

Value

Unit

12

A

300

mJ

Table 4. Gate-source zener diode

Symbol

Parameter

Test conditions Min. Typ. Max. Unit

BVGSO(1)

Igs=±1mA

Gate-source breakdown voltage

30

V

(Open Drain)

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

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