W15NM60N 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

일치하는 목록

W15NM60N

N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET

STMicroelectronics 

STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 300V, ID = 7A,

RG = 4.7Ω, VGS = 10V

(see Figure 17)

Min Typ Max Unit

12

ns

14

ns

80

ns

30

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min Typ Max Unit

ISD

ISDM (1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 14A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD =14A, di/dt =100A/µs,

VDD = 100V, Tj = 25°C

(see Figure 19)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

VDD = 100V

di/dt =100A/µs, ISD = 14A

Tj = 150°C (see Figure 19)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

14 A

56 A

1.3 V

390

ns

5

µC

25

A

500

ns

7

µC

25

A

5/18

Share Link: