STD13003L 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD

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STD13003L

NPN Silicon Power Transistor

Kodenshi Auk Co., LTD 

STD13003L

Electrical Characteristics

Characteristic

Collector-emitter sustaining voltage

Collector cut-off current

Emitter cut-off current

DC Current gain

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

Transition frequency

Output capacitance

Turn on Time

Storage Time

Fall Time

* Pulse test: tP≤300 ㎲, Duty cycle≤2%

Symbol

Test Condition

VCEO(sus) IC=5mA, IB=0

ICBO

VCB=700V, IE=0

IEBO

VEB=9V, IC=0

hFE*

VCE(sat)*

VBE(sat)*

IC=0.5A, VCE=2V

IC=1A, VCE=2V

IC=0.5A, IB=0.1A

IC=1A, IB=0.25A

IC=1.5A, IB=0.5A

IC=0.5A, IB=0.1A

IC=1A, IB=0.25A

fT

VCB=10V, IC=0.1A, f=1MHz

Cob

VCB=10V, IE=0, f=0.1MHz

ton

tstg

VCC=125V,IC=1A

IB1=-IB2=0.2A

tf

(Ta=25°C)

Min. Typ. Max. Unit

400

-

-

V

-

-

10

㎂

-

-

10

㎂

15

-

35

5

-

-

-

-

0.5

-

-

1

V

-

-

3

-

-

1

V

-

-

1.2

-

4

-

MHz

-

21

-

pF

-

1.1

-

-

4

-

㎲

-

0.7

-

KSD-T0D001-003

2

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