STD12NF06L 데이터 시트보기 (PDF) - STMicroelectronics

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STD12NF06L

N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD12NF06L

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM

VSD(1)

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 12A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12A,

di/dt = 100A/µs,

VDD = 16V, TJ = 150°C

Figure 14 on page 8

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

12 A

48 A

1.5 V

50

ns

65

µC

2.5

A

5/14

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