B9NK70Z 데이터 시트보기 (PDF) - STMicroelectronics
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B9NK70Z
STMicroelectronics
B9NK70Z Datasheet PDF : 14 Pages
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STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
(l) Pulse width limited by safe operating area
(1) ISD ≤7.5A, di/dt ≤200 µA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
TO-220 /
D2PAK / I2PAK
Value
TO-220FP
700
700
± 30
7.5
7.5 (*)
4.7
4.7 (*)
30
30 (*)
115
35
0.92
0.28
4000
4.5
-
2500
-55 to 150
-55 to 150
TO-247
7.5
4.7
30
156
1.25
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
THERMAL DATA
TO-220
I2PAK
D2PAK
TO-220FP
TO-247
Rthj-case Thermal Resistance Junction-case Max
1.09
3.6
0.8 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
30
°C/W
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
30 °C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
7.5
230
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
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