B12NM50 데이터 시트보기 (PDF) - STMicroelectronics

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B12NM50

N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET

STMicroelectronics 

STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VGS

ID

ID

IDM(2)

PTOT

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating Factor

VISO

dv/dt(3)

Insulation winthstand voltage (DC)

Peak diode recovery voltage slope

TJ

Operating junction temperature

Tstg

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤12A, di/dt ≤400A/µs, VDD =80%V(BR)DSS

Table 2. Thermal data

Symbol

Parameter

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Value

TO-220-

/D²PAK/I²PAK

Unit

TO-220FP

± 30

12

7.5

48

160

1.28

--

15

12(1)

7.5(1)

48(1)

35

0.28

2500

V

A

A

A

W

W/°C

V

V/ns

-65 to 150

°C

Value

TO-220/D²PAK/

I² PAK

Unit

TO-220FP

0.78

62.5

3.57 °C/W

°C/W

300

°C

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAS

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting Tj=25°C, Id=Iar, Vdd=50V)

Value

Unit

6

A

400

mJ

3/17

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