STB12NM50 데이터 시트보기 (PDF) - STMicroelectronics

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STB12NM50

N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET

STMicroelectronics 

STP12NM50 - STP12NM50FP

STB12NM50 - STB12NM50-1

N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK

MDmesh™ Power MOSFET

General features

Type

VDSS

(@Tjmax)

RDS(on)

ID

STB12NM50

STB12NM50-1

STP12NM50

STP12NM50FP

550V

550V

550V

550V

<0.35Ω 12A

<0.35Ω 12A

<0.35Ω 12A

<0.35Ω 12A

■ High dv/dt and avalanche capabilities

■ Low input capacitance and gate charge

■ 100% avalanche tested

■ Low gate input resistance

■ Tight process control and high manufacturing

yields

Description

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain

process with the Company’s PowerMESH™

horizontal layout. The resulting product has an

outstanding low on-resistance, impressively high

dv/dt and excellent avalanche characteristics. The

adoption of the Company’s proprietary strip

technique yields overall dynamic performance

that is significantly better than that of similar

competition’s products.

Applications

■ Switching application

3

2

1

TO-220

3

2

1

TO-220FP

3

1

D²PAK

123

I²PAK

Internal schematic diagram

Order codes

Part number

STB12NM50T4

STB12NM50-1

STP12NM50

STP12NM50FP

Marking

B12NM50

B12NM50

P12NM50

P12NM50FP

Package

D²PAK

I²PAK

TO-220

TO-220FP

Packaging

Tape & reel

Tube

Tube

Tube

July 2006

Rev 11

1/17

www.st.com

17

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