SRC1219E 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD
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SRC1219E Datasheet PDF : 4 Pages
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SRC1219E
NPN Silicon Transistor
Descriptions
• Switching application
• Interface circuit and driver circuit application
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
• High packing density
PIN Connection
OUT
OUT
IN
COMMON
IN
R1
R1
R2
R2
4.7KΩ
10KΩ
Ordering Information
Type NO.
SRC1219E
Marking
RC □
①②
①Device Code ② Year&Week Code
Package Code
SOT-523
COMMON
Absolute Maximum Ratings
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
Symbol
VO
VI
IO
PD
TJ
Tstg
Rating
50
20,-7
100
150
150
-55 ~ 150
(Ta=25°C)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Output cut-off current
DC current Gain
Output voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Input current
Input resistor (Input to base)
Input resistor (Base to common)
* : Characteristic of transistor only
Symbol
Test Condition
IO(OFF)
GI
VO(ON)
VO=50V, VI=0
VO=5V, IO=10mA
IO=10mA, II=0.5mA
VI(ON) VO=0.2V, IO=5mA
VI(OFF)
fT*
II
R1
R2
VO=5V, IO=0.1mA
VO=10V, IO=5mA, f=1MHz
VI=5V, IO=0
-
-
(Ta=25°C)
Min. Typ. Max. Unit
-
-
500 nA
30
-
-
-
-
0.1 0.3
V
-
1.2 1.6
V
0.5 0.82
-
V
-
200
-
MHz
-
-
1.8 mA
3.3 4.7
6.1
KΩ
7
10
13
KΩ
KSD-R5E021-000
1
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