MSS40-800 데이터 시트보기 (PDF) - STMicroelectronics

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MSS40-800

THYRISTOR MODULE

STMicroelectronics 

Fig. 1 : Maximun RMS power dissipation versus RMS

on-state current.

(F= 50 Hz)

P(W)

MSS40

Fig. 2 : Correlation between maximum RMS power dis-

sipation and maximum allowable temperature (Tamb)

for different thermal resistances heatsink + contact.

P (W)

Rth=O oC/W

Rt h=O .75 o C/ W

Rth=1.0 oC/W

Rth=1.5 oC/W

Tamb(oC)

Fig. 3 : RMS on-state current versus case temperature.

I T(RMS)(A)

=180 o

Fig. 4: Thermal transient impedance junction to case

versus pulse duration.

Zth(j-c) (oC/W)

Tcase( oC)

tp (s)

Fig. 5 : Relative variation of gate trigger and holding

current versus junction temperature.

Igt;Ih [Tj] / Igt; Ih [Tj=25oC]

Igt

Fig. 6 : Non repetitive surge peak on-state current ver-

sus number of cycles.

I TSM (A)

Tj initial = 250 C

Ih

Tj(oC)

Number of cycles

3/6

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