UT61L256JC-10 데이터 시트보기 (PDF) - Utron Technology Inc
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UT61L256JC-10 Datasheet PDF : 10 Pages
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Rev. 1.3
UTRON
UT61L256
32K X 8 BIT HIGH SPEED LOW VCC CMOS SRAM
WRITE CYCLE 1 ( WE Controlled) (1,2,3,5)
tWC
Address
tAW
CE
tCW
tAS
tWP
tWR
WE
DOUT
tWHZ
High-Z
tOW
(4)
(4)
tDW
tDH
DIN
Data Valid
WRITE CYCLE 2 ( CE Controlled) (1,2,5)
Address
CE
WE
DOUT
tWC
tAW
tAS
tCW
tWP
tWHZ
(4)
DIN
tWR
High-Z
tDW
tDH
Data Valid
Notes :
1. WE or CE must be HIGH during all address transitions.
2. A write occurs during the overlap of a low CE and a low WE .
3. During a WE controlled with write cycle with OE LOW, tWP must be greater than tWHZ+tDW to allow the drivers to turn off
and data to be placed on the bus.
4. During this period, I/O pins are in the output state, and input signals must not be applied.
5. If the CE LOW transition occurs simultaneously with or after WE LOW transition, the outputs remain
in a high impedance state.
6. tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
5
P80023
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