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UT61L5128MC-10 데이터 시트보기 (PDF) - Utron Technology Inc

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UT61L5128MC-10
Utron
Utron Technology Inc Utron
UT61L5128MC-10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Rev. 1.0
UTRON
UT61L5128
512K X 8 BIT HIGH SPEED CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to VSS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec0
VTERM
TA
TSTG
PD
IOUT
Tsolder
-0.5 to VCC+0.5
V
0 to +70
-65 to +150
1
W
50
mA
260
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
WE
CE
Standby
X
H
Output Disable
H
L
Read
H
L
Write
L
L
Note: H = VIH, L=VIL, X = Don't care.
OE
I/O OPERATION
SUPPLY CURRENT
X
High – Z
ISB, ISB1
H
High – Z
ICC
L
DOUT
ICC
X
DIN
ICC
DC ELECTRICAL CHARACTERISTICS (VCC = 3.3V±10%, TA = 0to 70)
PARAMETER
SYMBOL TEST CONDITION
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
VIH
VIL
ILI
VSS VIN VCC
ILO
VSS VI/O VCC
Output Disabled
Output High Voltage
Output Low Voltage
Operating Power
Supply Current
Standby Power
Supply Current
VOH
IOH= - 4mA
VOL
IOL= 8mA
ICC
Cycle time=Min.
-10
CE = VIL ,
-12
II/O = 0mA ,
-15
ISB
CE =VIH
-10
other pins are at VIH or VIL -12
-15
ISB1
CE =VIH
-10
other pins are at Vcc-0.2V -12
or 0.2V
-15
MIN.
2.2
- 0.5
-1
-1
MAX.
VCC+0.5
0.8
1
1
UNIT
V
V
µA
µA
2.4
-
V
-
0.4
V
-
170
mA
-
150
mA
-
130
mA
-
70
mA
-
60
mA
-
50
mA
-
20
mA
-
20
mA
-
20
mA
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
2
P80061

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