UT61L256CJC-10 데이터 시트보기 (PDF) - Utron Technology Inc
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UT61L256CJC-10 Datasheet PDF : 12 Pages
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UTRON
Rev. 1.1
UT61L256C
32K X 8 BIT HIGH SPEED CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Terminal Voltage with Respect to Vss
Operating Temperature
SYMBOL
VTERM
TA
RATING
-0.5 to +4.5
0 to +70
UNIT
V
℃
Storage Temperature
TSTG
-65 to +150
℃
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 sec)
Tsolder
260
℃
*Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions
for extended period may affect device reliability.
TRUTH TABLE
MODE
CE OE WE
Standby
HX
X
Output Disable
LH
H
Read
LL
H
Write
LX
L
Note: H = VIH, L=VIL, X = Don't care.
I/O OPERATION
High - Z
High - Z
DOUT
DIN
SUPPLY CURRENT
ISB,ISB1
ICC
ICC
ICC
DC ELECTRICAL CHARACTERISTICS (VCC = 3.1V~3.6V , TA = 0℃ to 70℃)
PARAMETER
SYMBOL TEST CONDITION
Input High Voltage
VIH
Input Low Voltage
VIL
Input Leakage Current
ILI
VSS ≦VIN ≦VCC
Output Leakage Current
ILO
VSS ≦VI/O ≦VCC
CE = VIH or OE = VIH
or WE = VIL
Output High Voltage
Output Low Voltage
Operating Power
Supply Current
VOH IOH = - 4mA
VOL IOL = 8mA
ICC
CE = VIL , II/O = 0mA
- 10
Cycle=Min.
- 12
- 15
Standby Power
Supply Current
ISB CE = VIH
ISB1 CE ≧VCC-0.2V
MIN.
2
-
-1
-1
MAX.
-
0.8
1
1
UNIT
V
V
µA
µA
2.0
-
V
-
0.4
V
-
75 mA
-
60 mA
-
50 mA
-
15 mA
-
3
mA
_____________________________________________________________________________________________
UTRON TECHNOLOGY INC.
P80058
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
2
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