SMK0170I 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD
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SMK0170I Datasheet PDF : 8 Pages
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SMK0170I
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance ④
Input capacitance
Output capacitance
Reverse transfer capacitance
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
ID=250A, VGS=0
ID=250A, VDS=VGS
VDS=700V, VGS=0V
VDS=0V, VGS=30V
VGS=10V, ID=0.5A
VDS=10V, ID=0.5A
VGS=0V, VDS=25V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=300V, ID=1.0A
RG=25Ω
③④
VDD=560V, VGS=10V
ID=1.0A
③④
Min.
700
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
12.5
0.5
124
17.7
2.6
7
21
13
27
4.1
1.8
0.9
Max.
-
4.0
1
100
15.0
-
155
22.1
3.3
-
-
-
-
5.1
-
-
Unit
V
V
A
nA
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current
Source current (Pulsed)
IS
Integral reverse diode
①
ISM
in the MOSFET
-
-
1.0
-
-
4.0
Forward voltage
④
VSD
VGS=0V, IS=1.0A
-
-
1.4
Reverse recovery time
Reverse recovery charge
trr
IS=1.0A, VGS=0V
Qrr
dIS/dt=100A/us
-
190
-
-
0.53
-
Unit
A
V
ns
uC
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=50mH, IAS=0.8A, VDD=50V, RG=25Ω
③ Pulse Test : Pulse Width＜300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
KSD-T6Q007-000
2
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