SMA6010
Electrical characteristics
NPN
Symbol
Specification
Unit
min
typ
max
ICBO
10
µA
IEBO
10
mA
VCEO
60
V
hFE
2000 5000 12000
VCE(sat)
1.5
V
VBE(sat)
2.0
V
VFEC
ton
tstg
tf
1.8
V
1.0
µs
4.0
µs
1.5
µs
fT
75
MHz
Cob
50
pF
Conditions
VCB=60V
VEB=6V
IC=10mA
VCE=4V, IC=3A
IC=3A, IB=6mA
IFEC=1A
VCC 30V,
IC=3A,
IB1=–IB2=10mA
VCE=12V, IE=–0.1A
VCB=10V, f=1MHz
PNP
Specification
Unit
min
typ
max
–10
µA
–10
mA
–60
V
2000 5000 12000
–1.5
V
–2.0
V
–1.8
V
0.4
µs
0.8
µs
0.6
µs
200
MHz
75
pF
(Ta=25°C)
Conditions
VCB=–60V
VEB=–6V
IC=–20mA
VCE=–4V, IC=–3A
IC=–3A, IB=–6mA
IFEC=–1A
VCC –30V,
IC=–3A,
IB1=–IB2=–10mA
VCE=–12V, IE=0.2A
VCB=–10V, f=1MHz
Characteristic curves
VCE(sat)-IB Characteristics (Typical)
NPN
3
PNP
–3
2
IC=4A
IC=2A
1
IC=1A
–2
IC=–4A
–1
IC=–2A
IC=–1A
0
0.2 0.5 1
3
5 10
IB (mA)
50 100 200
0
–0.3 –0.5 –1
–5 –10
IB (mA)
–50 –100 –200
VCE(sat)-IC Temperature Characteristics (Typical)
NPN (IC / IB=1000)
PNP
–3
(IC / IB=1000)
2
1
0
0.5
1
IC (A)
NPN
10
5
–2
–1
Ta=–30°C
25°C
75°C
0
56
–0.5
Safe Operating Area (SOA)
–10
–5
125°C
–1
IC (A)
PNP
–5 –6
1
0.5
0.1
Single Pulse
0.05 Without Heatsink
0.03 Ta=25°C
3
5 10
VCE (V)
50
100
–1
–0.5
–0.1
Single Pulse
–0.05 Without Heatsink
–0.03 Ta=25°C
–3
–5 –10
VCE (V)
–50
–100
θ j-a-PW Characteristics
20
10
5
1
0.5
1
5 10
50 100
500 1000
PW (mS)
PT-Ta Characteristics
20
15
10
5 Without Heatsink
0
–40
0
50
100
150
Ta (°C)
145