SKAI45A2GD12-W24DI 데이터 시트보기 (PDF) - Semikron

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SKAI45A2GD12-W24DI

Three-phase IGBT inverter

Semikron 

SKAI 45 A2 GD12-W24DI

HV SKAI 2

Three-phase IGBT inverter

SKAI 45 A2 GD12-W24DI

Target Data

Features

• Optimized for HEV and EV

• high power density

• high overload capability

• Compact integration in IP67 Enclosure:

V, I, T sensors

Gate driver with protection features

EMI filters

Liquid cooling

DC link capacitor

Typical Applications*

• commercial application vehicle

• hybrid vehicle

• battery driven vehicle

No. 14282008

Characteristics

Symbol Conditions

min.

Interface parameters

Vs

ISO

IS

ViH

ViL

tPOR

tpRESET

Auxiliary supply voltage primary side

Auxiliary supply current primary side

without driving a gate (Vs = 24 V)

Auxiliary supply current primary side,

driving the gates (Vs = 24 V)

Input signal voltage (HIGH)

Input signal voltage (LOW)

Power-on reset completed

Error reset time

16

0.7 * Vs

GND - 0.3

Controller switching parameters

td(on)IO

Input-output turn-on propagation time

td(off)IO

Input-output turn-off propagation time

tjitter

Signal transfer prim - sec (total jitter)

tSIS

Short pulse suppression time

0.2

tet

Input impulse extension time

0.9

td(err)DSCP

Error input-output propagation time for

DSCP error

0.2

td(err)OCP

Error input-output propagation time for

OCP error

td(err)TMP

Error input-output propagation time for

temperature error

tTD

Top-Bot interlock dead time

tbl

VCE monitoring blanking time

Protection functions

TPCBtrip

Over temperature protection trip level

(PCB)

100

TCStrip

Over temperature protection trip level

on ceramic-substrate

120

TRelPCBtrip

Release temperature for PCB

overtemperature trip level

90

TRelCStrip

Release temperature for ceramic

substrate overtemperature trip level

85

VDCtrip

DC-Link voltage trip level

800

VVStrip

Under voltage protection trip level of

board primary side

VVSrst

Threshold voltage level for driver reset

after failure event

16

ITRIPSC

Overcurrent trip level

Ioutsens

AC sensing range

mIoutsens Gradient of output current sensing

BWIoutsens Bandwidth (3 dB) of AC current sensing

VDCsens Measurable DC-link-voltage

mVDCsens Gradient of DC-link voltage sensing

BWVDCsens

Bandwidth (3 dB) of DC-link voltage

sensing

567

-616

16.2

0

9.835

TCSsens

Temperature sensing range on ceramic

substrate

30

mTCSsens

Gradient of temperature sensing on

ceramic-substrate

BWTCSsens

Bandwidth of temperature sensing on

ceramic-substrate

typ.

24

0.1

0.5

0.5

0.25

1

4

4

5

16.695

17

10.034

0.25

83.3

100

max. Unit

32

V

450

mA

870

mA

Vs + 0.3 V

0.3 * Vs V

0.9

s

3

s

0.6

µs

0.6

µs

50

ns

0.3

µs

1.1

µs

1

µs

10

µs

50

ms

4.1

µs

5.1

µs

°C

°C

°C

°C

V

14

V

616

17.205

1000

10.236

V

APEAK

A

mV/A

kHz

V

mV/V

kHz

150

°C

mV/°C

Hz

HV SKAI 2

2

Rev. 10 – 20.04.2011

© by SEMIKRON

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