SKAI45A2GD12-W12DI 데이터 시트보기 (PDF) - Semikron

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SKAI45A2GD12-W12DI

Three-phase IGBT inverter

Semikron 

SKAI 45 A2 GD12-W12DI

HV SKAI 2

Three-phase IGBT inverter

SKAI 45 A2 GD12-W12DI

Target Data

Features

• Optimized for HEV and EV

• high power density

• high overload capability

• Compact integration in IP67 Enclosure:

V, I, T sensors

Gate driver with protection features

EMI filters

Liquid cooling

DC link capacitor

Typical Applications*

• commercial application vehicle

• hybrid vehicle

• battery driven vehicle

No. 14282015

Characteristics

Symbol Conditions

min.

Interface parameters

Vs

ISO

IS

ViH

ViL

tPOR

tpRESET

Auxiliary supply voltage primary side

Auxiliary supply current primary side

without driving a gate (Vs = 12 V)

Auxiliary supply current primary side,

driving the gates (Vs = 12 V)

Input signal voltage (HIGH)

Input signal voltage (LOW)

Power-on reset completed

Error reset time

8

0.7 * Vs

GND - 0.3

Controller switching parameters

td(on)IO

Input-output turn-on propagation time

td(off)IO

Input-output turn-off propagation time

tjitter

Signal transfer prim - sec (total jitter)

tSIS

Short pulse suppression time

0.2

tet

Input impulse extension time

0.9

td(err)DSCP

Error input-output propagation time for

DSCP error

0.2

td(err)OCP

Error input-output propagation time for

OCP error

td(err)TMP

Error input-output propagation time for

temperature error

tTD

Top-Bot interlock dead time

tbl

VCE monitoring blanking time

Protection functions

TPCBtrip

Over temperature protection trip level

(PCB)

100

TCStrip

Over temperature protection trip level

on ceramic-substrate

120

TRelPCBtrip

Release temperature for PCB

overtemperature trip level

90

TRelCStrip

Release temperature for ceramic

substrate overtemperature trip level

85

VDCtrip

DC-Link voltage trip level

800

VVStrip

Under voltage protection trip level of

board primary side

VVSrst

Threshold voltage level for driver reset

after failure event

8

ITRIPSC

Overcurrent trip level

Ioutsens

AC sensing range

mIoutsens Gradient of output current sensing

BWIoutsens Bandwidth (3 dB) of AC current sensing

VDCsens Measurable DC-link-voltage

mVDCsens Gradient of DC-link voltage sensing

BWVDCsens

Bandwidth (3 dB) of DC-link voltage

sensing

567

-616

16.2

0

9.835

TCSsens

Temperature sensing range on ceramic

substrate

30

mTCSsens

Gradient of temperature sensing on

ceramic-substrate

BWTCSsens

Bandwidth of temperature sensing on

ceramic-substrate

typ.

12

0.1

0.5

0.5

0.25

1

4

4

5

16.695

17

10.034

0.25

83.3

100

max. Unit

16

V

900

mA

1740 mA

Vs + 0.3 V

0.3 * Vs V

0.9

s

3

s

0.6

µs

0.6

µs

50

ns

0.3

µs

1.1

µs

1

µs

10

µs

50

ms

4.1

µs

5.1

µs

°C

°C

°C

°C

V

7

V

616

17.205

1000

10.236

V

APEAK

A

mV/A

kHz

V

mV/V

kHz

150

°C

mV/°C

Hz

HV SKAI 2

2

Rev. 6 – 20.04.2011

© by SEMIKRON

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