IRF9630 데이터 시트보기 (PDF) - Vishay Semiconductors
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IRF9630 Datasheet PDF : 8 Pages
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www.vishay.com
IRF9630, SiHF9630
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) max. ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
-200
VGS = -10 V
29
5.4
15
Single
0.80
S
TO-220AB
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• P-channel
Available
• Fast switching
Available
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF9630PbF
SiHF9630-E3
IRF9630
SiHF9630
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
VDS
VGS
VGS at -10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12).
c. ISD -6.5 A, dI/dt 20 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
-200
± 20
-6.5
-4.0
-26
0.59
500
-6.4
7.4
74
-5.0
-55 to +150
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
S16-0754-Rev. D, 02-May-16
1
Document Number: 91084
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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