SGB02N60 데이터 시트보기 (PDF) - Infineon Technologies

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SGB02N60

Fast IGBT in NPT-technology

Infineon Technologies 

SGP02N60,

SGB02N60

SGD02N60

100ns

t

d(off)

tf

100ns

td(off)

tf

td(on)

tr

10ns

0A

1A

2A

3A

4A

5A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 1 1 8 Ω,

Dynamic test circuit in Figure E)

td(on)

tr

10ns

0Ω

100Ω

200Ω

300Ω

400Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 2A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

tr

10ns

0°C

50°C

100°C

150°C

Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 2A, RG = 1 1 8Ω,

Dynamic test circuit in Figure E)

5.5V

5.0V

4.5V

4.0V

3.5V

max.

3.0V

typ.

2.5V

min.

2.0V

-50°C 0°C

50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(IC = 0.15mA)

6

Jul-02

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