BA12003B 데이터 시트보기 (PDF) - ROHM Semiconductor
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BA12003B Datasheet PDF : 7 Pages
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Standard ICs
BA12001B / BA12003B / BA12003BF / BA12004B
!Internal circuit configuration
IN
7.2kΩ
3kΩ
COM
OUT
GND
IN
2.7kΩ
7.2kΩ
3kΩ
COM
OUT
GND
Fig.1 BA12001B
Fig.2 BA12003B / BF
10.5kΩ
IN
7.2kΩ
3kΩ
COM
OUT
GND
Fig.3 BA12004B
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Power supply voltage
VCE
60
Input voltage other than BA12001B
VIN
−0.5∼+30
Input current
BA12001B
IIN
25
Output current
IOUT
500
Ground pin current
IGND
2.3∗1
DIP package
1250∗2
Power dissipation
Pd
SOP package
625∗3
Diode reverse voltage
VR
60
Diode forward current
IF
500
Operating temperature
Topr
−25∼+75
Storage temperature
Tstg
−55∼+150
∗1 Pulse width ≤ 20ms, duty cycle ≤ 10%, same current for all 7 circuits
∗2 Reduced by 10mW for each increase in Ta of 1˚C over 25˚C .
∗3 Reduced by 50mW for each increase in Ta of 1˚C over 25˚C .
Unit
V
V
mA / unit
mA / unit
A
mW
V
mA
˚C
˚C
!Recommended operating conditions (Ta=25°C)
Parameter
Output current
Power supply voltage
Input voltage (excluding BA12001B)
Input current (BA12001B only)
Symbol
IOUT
VCE
VIN
IIN
Min.
−
−
−
−
Typ.
−
−
−
−
Max.
350
55
30
25
Unit
mA
V
V
mA / unit
Conditions
Fig.9, 10
−
−
−
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