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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

S16100BH 데이터 시트보기 (PDF) - STMicroelectronics

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S16100BH
ST-Microelectronics
STMicroelectronics ST-Microelectronics
S16100BH Datasheet PDF : 5 Pages
1 2 3 4 5
®
S16xxxH
SCR
FEATURES
IT(RMS) = 16A
VDRM = 200V to 800V
High surge current capability
DESCRIPTION
The S16xxxH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
applications.
K
A
G
TO220
non-insulated
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RM S)
IT( AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(180° conduction angle)
Tc= 90°C
Average on-state current
(180° conduction angle)
Tc= 90°C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 100 mA diG /dt = 1 A/µs.
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
Value
16
10
175
160
128
100
- 40, + 150
- 40, + 125
260
Unit
A
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
Voltage
Unit
B
D
M
N
200 400 600 800 V
Januaryr 1995
1/5

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