RTR025P02 데이터 시트보기 (PDF) - ROHM Semiconductor

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RTR025P02

Switching (−20V, −2.5A)

ROHM Semiconductor 

Transistors

Switching (−20V, −2.5A)

RTR025P02

RTR025P02

zFeatures

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (TSMT3).

zApplication

Power switching, DC / DC converter.

zStructure

Silicon P-channel

MOS FET

zPackaging specifications

Type

Package

Code

Basic ordering unit (pieces)

RTR025P02

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Continuous

Pulsed

Source current

(Body diode)

Continuous

Pulsed

Total power dissipation

Channel temperature

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Symbol

VDSS

VGSS

ID

IDP ∗1

IS

ISP ∗1

PD ∗2

Tch

Tstg

Limits

−20

±12

±2.5

±10

−0.8

−3.2

1.0

150

−55 to +150

zExternal dimensions (Unit : mm)

TSMT3

2.9±0.1

0.4

+0.1

−0.05

Each

same

lead has

dimensions

(3)

1.0MAX.

0.85±0.1

0.7±0.1

0~0.1

(1)

0.95 0.95

1.9±0.2

(2)

0.16

+0.1

−0.06

Each lead has same dimensions

Abbreviated symbol : TY

zEquivalent circuit

(3)

Unit

V

V

A

A

A

A

W

°C

°C

(1)

∗2

∗1

(2)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

(1) Gate

(2) Source

(3) Drain

zThermal resistance (Ta=25°C)

Parameter

Channel to ambient

Symbol

Rth (ch-A)

Limits

125

Unit

°C / W

1/4

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