RT8025 데이터 시트보기 (PDF) - Richtek Technology
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RT8025 Datasheet PDF : 13 Pages
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RT8025
Parameter
Symbol
Test Conditions
Min
Output Voltage
Accuracy
FB Input Current
Adjustable
ΔVOUT
IFB
VIN = VOUT + ΔV to 5.5V
0A < IOUT < 400mA
VFB = VIN
(Note 5) −3
−50
RDS(ON) of P-Channel MOSFET RDS(ON)_P IOUT = 200mA
VIN = 3.6V
--
VIN = 2.5V
--
RDS(ON) of N-Channel MOSFET RDS(ON)_N IOUT = 200mA
VIN = 3.6V
--
VIN = 2.5V
--
P-Channel Current Limit
ILIM_P
VIN = 2.5V to 5.5 V
1
EN High-Level Input Voltage
VEN_H
VIN = 2.5V to 5.5V
1.5
EN Low-Level Input Voltage
VEN_L
VIN = 2.5V to 5.5V
--
Undervoltage Lock Out threshold
--
Typ
--
--
0.3
0.4
0.25
0.35
--
--
--
1.8
Max Unit
3
%
50 nA
0.65
Ω
0.80
0.55
Ω
0.65
1.8 A
--
V
0.4 V
--
V
Hysteresis
--
0.1
--
V
Oscillator Frequency
fOSC
Thermal Shutdown Temperature TSD
Min. On Time
VIN = 3.6V, IOUT = 100mA
0.8 1.25 1.85 MHz
--
160
--
°C
--
50
--
ns
Max. Duty Cycle
100 --
--
%
LX Leakage Current
VIN = 3.6V, VLX = 0V or VLX = 3.6V -1
--
1
μA
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of
JEDEC 51-3 thermal measurement standard.
Note 3. Devices are ESD sensitive. Handling precaution recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. ΔV = IOUT x RDS(ON)_P
DS8025-02 March 2011
www.richtek.com
5
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