RT8008-10GB 데이터 시트보기 (PDF) - Richtek Technology
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RT8008-10GB Datasheet PDF : 14 Pages
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RT8008
Parameter
Symbol
Test Conditions
FB Input Current
IFB
VFB = VIN
PMOSFET RON
PRDS(ON) IOUT = 200mA
VIN = 3.6V
VIN = 2.5V
NMOSFET RON
NRDS(ON) IOUT = 200mA
VIN = 3.6V
VIN = 2.5V
P-Channel Current Limit
IP(LM)
VIN = 2.5V to 5.5 V
EN High-Level Input Voltage
VENH
VIN = 2.5V to 5.5V
EN Low-Level Input Voltage
VENL
VIN = 2.5V to 5.5V
Under Voltage Lockout Threshold
Hysteresis
Oscillator Frequency
Thermal Shutdown Temperature
Min. On Time
fOSC
TSD
VIN = 3.6V, IOUT = 100mA
Max. Duty Cycle
LX Leakage Current
VIN = 3.6V, VLX = 0V or VLX = 3.6V
Min Typ Max Unit
−50 -- 50 nA
-- 0.3 --
Ω
-- 0.4 --
-- 0.25 --
Ω
-- 0.35 --
1
-- 1.8 A
1.5 --
--
V
--
-- 0.4 V
-- 1.8 --
V
-- 0.1 --
V
1.2 1.5 1.8 MHz
-- 160 -- °C
-- 50 -- ns
100 --
--
%
−1 --
1 μA
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a low effective single layer thermal conductivity test board of
JEDEC 51-3 thermal measurement standard. Pin 2 of SOT-23-5/TSOT-23-5 packages is the case position for θJC
measurement.
Note 3. Devices are ESD sensitive. Handling precaution recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
DS8008-07 March 2011
www.richtek.com
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