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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

SMD5962-9232406MXA 데이터 시트보기 (PDF) - Simtek Corporation

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SMD5962-9232406MXA
Simtek
Simtek Corporation Simtek
SMD5962-9232406MXA Datasheet PDF : 16 Pages
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Internally, RECALL is a two-step procedure. First,
the SRAM data is cleared, and second, the nonvola-
tile information is transferred into the SRAM cells.
After the tRECALL cycle time the SRAM will once again
be ready for READ and WRITE operations. The
RECALL operation in no way alters the data in the
Nonvolatile Elements. The nonvolatile data can be
recalled an unlimited number of times.
POWER-UP RECALL
During power up, or after any low-power condition
(VCC < VRESET), an internal RECALL request will be
latched. When VCC once again exceeds the sense
voltage of VSWITCH, a RECALL cycle will automatically
be initiated and will take tRESTORE to complete.
If the STK11C68 is in a WRITE state at the end of
power-up RECALL, the SRAM data will be corrupted.
To help avoid this situation, a 10K Ohm resistor
should be connected either between W and system
VCC or between E and system VCC.
100
STK11C68 (SMD5962–92324)
HARDWARE PROTECT
The STK11C68 offers hardware protection against
inadvertent STORE operation during low-voltage
conditions. When VCC < VSWITCH, software STORE
operations are inhibited.
LOW AVERAGE ACTIVE POWER
The STK11C68 draws significantly less current
when it is cycled at times longer than 50ns. Figure 2
shows the relationship between ICC and READ cycle
time. Worst-case current consumption is shown for
both CMOS and TTL input levels (commercial tem-
perature range, VCC = 5.5V, 100% duty cycle on chip
enable). Figure 3 shows the same relationship for
WRITE cycles. If the chip enable duty cycle is less
than 100%, only standby current is drawn when the
chip is disabled. The overall average current drawn
by the STK11C68 depends on the following items:
1) CMOS vs. TTL input levels; 2) the duty cycle of
chip enable; 3) the overall cycle rate for accesses;
4) the ratio of READs to WRITEs; 5) the operating
temperature; 6) the Vcc level; and 7) I/O loading.
100
80
80
60
40
TTL
20
CMOS
0
50
100 150 200
Cycle Time (ns)
Figure 2: ICC (max) Reads
60
TTL
40
CMOS
20
0
50
100 150 200
Cycle Time (ns)
Figure 3: ICC (max) Writes
Document Control #ML0007 Rev 0.3
9
February, 2007

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