RS1A 데이터 시트보기 (PDF) - Philips Electronics
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RS1A Datasheet PDF : 12 Pages
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Philips Semiconductors
SMA fast soft-recovery
controlled avalanche rectifiers
Product specification
RS1 series
SYMBOL
PARAMETER
VRMS
root mean square voltage
RS1A
RS1B
RS1D
RS1G
RS1J
RS1K
RS1M
IF(AV)
average forward current
IFSM
non-repetitive peak forward current
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
averaged over any 20 ms period;
Ttp = 110 °C; see Fig.2
t = 8.3 ms half sine wave;
Tj = 25 °C prior to surge;
VR = VRRMmax
See Fig.3
MIN. MAX. UNIT
−
35
V
−
70
V
−
140
V
−
280
V
−
420
V
−
560
V
−
700
V
−
1
A
−
25
A
−65
+175 °C
−65
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
IF = 1 A; see Fig.4
IR
reverse current
VR = VRRMmax; see Fig.5
VR = VRRMmax; Tj = 165 °C; see Fig.5
trr
reverse recovery time
when switched from IF = 0.5 A to IR = 1 A;
RS1A to RS1J
measured at IR = 0.25 A; see Fig.9
RS1K and RS1M
Cd
diode capacitance
VR = 4 V; f = 1 MHz; see Fig.6
TYP.
−
−
−
MAX.
1.3
5
50
UNIT
V
µA
µA
−
250
ns
−
300
ns
7
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point; see Fig.7
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
27
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more
information please refer to the ‘General Part of associated Handbook’.
2000 Feb 14
3
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