ISL9R860S3S 데이터 시트보기 (PDF) - Fairchild Semiconductor
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ISL9R860S3S Datasheet PDF : 6 Pages
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Package Marking and Ordering Information
Device Marking
R860P2
R860S2
R860S3S
Device
ISL9R860P2
ISL9R860S2
ISL9R860S3S
Package
TO-220AC
TO-262
TO-263AB
Tape Width
-
-
24mm
Quantity
-
-
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 600V
TC = 25°C
TC = 125°C
-
- 100 µA
-
- 1.0 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 8A
TC = 25°C
TC = 125°C
- 2.0 2.4 V
- 1.6 2.0 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
-
30
-
pF
Switching Characteristics
trr
Reverse Recovery Time
IF = 1A, dIF/dt = 100A/µs, VR = 30V
-
18 25 ns
IF = 8A, dIF/dt = 100A/µs, VR = 30V
-
21 30 ns
trr
IRRM
QRR
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovery Charge
IF = 8A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
-
28
-
ns
- 3.2 -
A
-
50
-
nC
trr
S
IRRM
QRR
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovery Charge
IF = 8A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
-
77
-
ns
- 3.7 -
- 3.4 -
A
- 150 -
nC
trr
S
IRRM
QRR
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovery Charge
IF = 8A,
dIF/dt = 600A/µs,
VR = 390V,
TC = 125°C
-
53
-
ns
- 2.5 -
- 6.5 -
A
195 -
nC
dIM/dt Maximum di/dt during tb
- 500 - A/µs
Thermal Characteristics
RθJC
RθJA
RθJA
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-262
Thermal Resistance Junction to Ambient TO-263
-
- 1.75 °C/W
-
-
62 °C/W
-
-
62 °C/W
62 °C/W
©2002 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S2, ISL9R860S3S Rev. C
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