GLT6100L08LL-100TC 데이터 시트보기 (PDF) - G-Link Technology
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GLT6100L08LL-100TC Datasheet PDF : 10 Pages
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G-LINK
GLT6100L16
Ultra Low Power 64k x 16 CMOS SRAM
May 2000(Rev. 0.3)
Pin Descriptions:
Name
A0 – A15
CE 1 and CE2
OE
WE
I/O0 – I/O15
VCC
GND
NC
Function
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Data Input and Data Output
3V Power Supply
Ground
No Connection
Truth Table:
CE OE WE
HXX
L LH
L LH
L LH
LXL
LXL
LXL
L HH
LXX
BLE BHE
XX
LH
HL
LL
LL
LH
HL
XX
HH
I/O0-I/O7
High-Z
Data Out
High-Z
Data Out
Data In
Data In
High-Z
High-Z
High-Z
I/O8-I/O15
High-Z
High-Z
Data Out
Data Out
Data In
High-Z
Data In
High-Z
High-Z
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Mode
Standby
Low byte Read
High Byte Read
Word Read
Word Write
Low Byte Write
High byte Write
Output Disable
Output Disable
Absolute Maximum Ratings*
Parameter
Voltage on Any Pin Relative to Gnd
Power Dissipation
Storage Temperature (Plastic)
Temperature Under Bias
Symbol
Vt
PT
Tstg
Tbias
Minimum
-0.5
-
-55
-40
Maximum
4.6
1.0
+150
+85
Unit
V
W
°C
°C
*Note : Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any conditions outside those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-2-
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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