GLT6400L08LL-70FC 데이터 시트보기 (PDF) - G-Link Technology
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GLT6400L08LL-70FC Datasheet PDF : 10 Pages
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G-LINK
GLT6400L08
Ultra Low Power 512k x 8 CMOS SRAM
Feb 2001(Rev. 1.1)
DC Operating Characteristics ( 70ns Vcc=3V to 3.6V , 85ns Vcc=2.7V to 3.3V)
Parameter
Sym.
Test Conditions
70
Min Max
85
Min Max
Unit
Input Leakage Current
ILI
VCC = Max,
Vin = Gnd to VCC
1
1 µA
Output Leakage
Current
ILO CE1 =VIH
1
VCC = Max, VOUT = Gnd to VCC
1 µA
Operating Power
Supply Current
ICC
CE1 =VIL ,
3
VIN=VIH or VIL, IOUT=0mA
ICC1 CE1 =VIL ,
25
IOUT = 0mA,
Average Operating
Min Cycle, 100% Duty
Current
ICC2 CE1 =0.2V
3
IOUT = 0mA,
Cycle Time=1µs, 100% Duty
Standby Power Supply ISB
Current(TTL Level)
CE1 =VIH
0.5
Standby Power Supply ISB1
Current (CMOS Level)
CE1 ≥ VCC- GLT6400L08LL
5
0.2V or f=0
VIN ≤ 0.2V or
VIN ≥ VCC-0.2V GLT6400L08SL 1
5 mA
45 mA
3 mA
0.3 mA
20 µA
5 µA
Output Low Voltage
Output High Voltage
VOL IOL = 2 mA
VOH IOH = -1 mA
0.4
0.4 V
2.4
2.4
V
Data Retention
Parameter
VCC for Data retention
Data Retention Current
Chip Deselect to Data Retention Time
Operating Recovery Time(2)
Sym.
VDR
ICCDR
tCDR
tR
Test Conditions
CE1 ≥ VCC -0.2V or
VIN ≥ VCC -0.2V or
VIN ≤ 0.2V
Min.
1.0
-
0
tRC
Max.
-
4
-
-
Unit
V
µA
ns
ns
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-4-
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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