RN2310(2007) 데이터 시트보기 (PDF) - Toshiba
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RN2310 Datasheet PDF : 5 Pages
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RN2310,RN2311
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2310,RN2311
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1310, RN1311
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
−50
−50
−5
Unit
JEDEC
―
JEITA
V
TOSHIBA
SC-70
2-2E1A
V
Weight: 0.006g (typ.)
V
−100
mA
100
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation Frequency
Collector output capacitance
Input resistor
RN2310
RN2311
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Test
Circuit
Test Condition
― VCB = −50V, IE = 0
― VEB = −5V, IC = 0
― VCE = −5V, IC = −1mA
― IC = −5mA, IB = −0.25mA
― VCE = −10V, IC = −5mA
― VCB = −10V, IE = 0, f = 1MHz
R1
―
―
Min Typ. Max Unit
―
― −100 nA
―
― −100 nA
120
―
400
―
― −0.1 −0.3
V
― 200 ― MHz
―
3
6
pF
3.29 4.7 6.11
kΩ
7
10
13
1
2007-11-01
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