RJP60V0DPM 데이터 시트보기 (PDF) - Renesas Electronics
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RJP60V0DPM Datasheet PDF : 8 Pages
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RJP60V0DPM
Switching Characteristics (Typical) (1)
1000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25 °C
tf
100
td(off)
td(on)
10
tr
1
1
10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
VCC = 300 V, VGE = 15 V
IC = 22 A, Ta = 25 °C
100
10
1
tf
td(off)
td(on)
tr
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 300 V, VGE = 15 V
IC = 22 A, Rg = 5 Ω
tf
100
td(off)
td(on)
tr
10
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25 °C
1000
Eon
Eoff
100
10
1
10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
VCC = 300 V, VGE = 15 V
IC = 22 A, Ta = 25 °C
1000
Eon
Eoff
100
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10000
VCC = 300 V, VGE = 15 V
IC = 22 A, Rg = 5 Ω
1000
Eon
Eoff
100
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS0669EJ0100 Rev.1.00
Feb 07, 2012
Page 5 of 7
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