RJH60D0DPK
Preliminary
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ Diode reverse current
ICES / IR
—
Gate to emitter leak current
IGES
—
Gate to emitter cutoff voltage
VGE(off)
4.0
Collector to emitter saturation voltage VCE(sat)
—
VCE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Switching time
td(on)
—
tr
—
td(off)
—
tf
—
Typ
—
—
—
1.6
2.0
1000
80
32
42
7
21
35
50
80
100
Max
100
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
(Ta = 25°C)
Unit
Test Conditions
μA VCE = 600 V, VGE = 0
μA VGE = ± 30 V, VCE = 0
V
VCE = 10 V, IC = 1 mA
V
IC = 20 A, VGE = 15 V Note3
V
IC = 40 A, VGE = 15 V Note3
pF VCE = 25 V
pF
VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 20 A
ns IC = 20 A
ns RL = 15 Ω
ns
VGE = 15 V
ns Rg = 5 Ω
FRD Forward voltage
FRD reverse recovery time
VF
—
1.8
2.3
V
trr
—
100
—
ns
Notes: 3. Pulse test
4. Under development. −The specifications potentially be changed without notice.
IF = 20 A Note3
IF = 20 A
diF/dt = 100 A/μs
REJ03G1845-0100 Rev.1.00 Oct 14, 2009
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