RJH60D3DPE 데이터 시트보기 (PDF) - Renesas Electronics
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RJH60D3DPE Datasheet PDF : 10 Pages
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RJH60D3DPE
Main Characteristics
Power Dissipation vs.
Case Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
100
PW
10
100 μs
= 10 μs
1
Tc = 25°C
Single pulse
0.1
1
10
100
1000
Collector to Emitter Voltage VCE (V)
IGBT Output Characteristics (Typical)
70
60
15 V
12 V
18 V
50
10 V
40
30
20
VGE = 8 V
10
Tj = 25°C
Pulse Test
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS0161EJ0500 Rev.5.00
Apr 19, 2012
Preliminary
Maximum DC Collector Current vs.
Case Temperature
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Turn-off SOA
80
60
40
20
0
0
200
400
600
800
Collector to Emitter Voltage VCE (V)
IGBT Output Characteristics (Typical)
70
60
15 V
50
18 V
40
12 V
10 V
30
20
VGE = 8 V
10
Tj = 150°C
Pulse Test
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Page 3 of 9
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