RJH60D2DPE 데이터 시트보기 (PDF) - Renesas Electronics
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RJH60D2DPE Datasheet PDF : 10 Pages
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RJH60D2DPE
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
IC = 12 A
25 A
3
2
1
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Transfer Characteristics (Typical)
50
VCE = 10 V
Pulse Test
40
Tc = 25°C
150°C
30
20
10
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
6
IC = 10 mA
4
1 mA
2
VCE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
IC = 12 A
4
25 A
3
2
Tc = 150°C
Pulse Test
1
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
4.0
VGE = 15 V
3.5 Pulse Test
3.0
IC = 25 A
2.5
2.0
12 A
6A
1.5
1.0
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
12
10
0
Collector current wave
8
(Square wave)
6
4
2 Tj = 150°C, Tc = 100°C
VCE = 300 V, VGE = 15 V
Rg = 5 Ω, duty = 50%
0
1
10
100
Frequency f (kHz)
1000
R07DS0159EJ0400 Rev.4.00
Apr 19, 2012
Page 4 of 9
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