RJH60D1DPE-00-J3(2009) 데이터 시트보기 (PDF) - Renesas Electronics

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RJH60D1DPE-00-J3
(Rev.:2009)

Silicon N Channel IGBT Application: Inverter

Renesas Electronics 

RJH60D1DPE

Preliminary

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

/ Diode reverse current

ICES / IR

—

Gate to emitter leak current

IGES

—

Gate to emitter cutoff voltage

VGE(off)

4.0

Collector to emitter saturation voltage VCE(sat)

—

VCE(sat)

—

Input capacitance

Cies

—

Output capacitance

Coes

—

Reveres transfer capacitance

Cres

—

Total gate charge

Qg

—

Gate to emitter charge

Qge

—

Gate to collector charge

Qgc

—

Switching time

td(on)

—

tr

—

td(off)

—

tf

—

Typ

—

—

—

1.8

2.3

290

25

7.5

12.0

2.0

6.0

25

35

40

100

Max

100

±1

6.0

2.2

—

—

—

—

—

—

—

—

—

—

—

(Ta = 25°C)

Unit

Test Conditions

μA VCE = 600 V, VGE = 0

μA VGE = ±30 V, VCE = 0

V

VCE = 10 V, IC = 1 mA

V

IC = 8 A, VGE = 15 V Note3

V

IC = 16 A, VGE = 15 V Note3

pF VCE = 25 V

pF

VGE = 0

pF f = 1 MHz

nC VGE = 15 V

nC VCE = 300 V

nC IC = 8 A

ns IC = 8 A

ns RL = 37.5 Ω

ns

VGE = 15 V

ns Rg = 5 Ω

FRD forward voltage

FRD reverse recovery time

VF

—

1.8

2.3

V

trr

—

100

—

ns

Notes: 3. Pulse test.

4. Under development. −The specification potentially be changed without notice.

IF = 8 A Note3

IF = 8 A

diF/dt = 100 A/μs

REJ03G1840-0100 Rev.1.00 Oct 14, 2009

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